RESEARCH: Graduate School of Bio-Applications and Systems Engineering (BASE, TUAT)

Tokyo University of Agriculture and Technology (TUAT)

SiCl4の亜鉛還元反応における個々のシリコンワイヤーのin-situ成長観察 In-situ observation of the growth of individual silicon wires in the zinc reduction reaction of SiCl4

稲澤先生の研究成果が、2015年2月にJournal of Crystal Growth, vol. 412, pp. 109-115 に掲載されました。図

本研究では、in-situにおけるシリコンワイヤの成長をモニタリングすることに成功しました。26本のワイヤについて、成長速度の平均は15 mm min−1でした。また、ワイヤの直径は、側壁の粗さの影響を受けることがわかりました。In-situにおける観察は VLS法の成長過程の動力学的側面を理解する上で、まだまだ欠かすことができません。


Research from Inasawa’s group has been published in Journal of Crystal Growth, vol. 412 pp. 109-115 Feb. 2015.

In this research, the authors highlighted four main points. First, they succeeded in conducting in-situ monitoring of the growth of silicon wires. Second, the average growth rate for 26 wires was ca. 15 mm min−1. Third, diameter of wires would affect roughness of sidewalls. Finally, in-situ monitoring is still necessary to understand kinetics in vapor–liquid–solid growth.

For further reading: Here
Inasawa’s Group Homepage

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This entry was posted on 2015/08 by .


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